radiation thermometer are installed above and below the carbon crucible, and the temperature of the SiC raw material and the crystal is monitored through the measurement window.
Accurate temperature control is extremely important for growing high-purity SiC crystals. In this method, radiation thermometer are installed above and below the carbon pot, and the temperature is monitored directly through the measurement window from the SiC raw material to the growing crystal.
- radiation thermometer (with mirror): Measures temperature at two points, top and bottom, with high accuracy
- Measurement window, external monitor: Ensures visibility and allows observation of crystal surface with video scope image
- Setting display: Connect to PLC system via 4 to 20mA
This enables real-time monitoring of temperature distribution throughout the entire SiC crystal growth process, improving quality and optimizing production efficiency.
