Chapter 1
Temperature measurement in SiC crystal growth
In the growth of high-purity SiC crystals, precise temperature control is crucial. In this configuration, radiation thermometer are placed above and below the carbon crucible, and the SiC raw material and the growing crystals are measured through the measurement windows.
Measurements taken from the top and bottom of the carbon crucible.
The temperature of the SiC raw material and the growing crystal are measured using radiation thermometer positioned above and below.
configuration allows for real-time monitoring of the temperature distribution throughout the entire SiC crystal growth process by checking the temperatures at two points, one above and one below.
The concept of temperature control in semiconductor manufacturing is explained in detail in "What is temperature control in semiconductor manufacturing?".
Chapter 2
Temperature monitoring of SiC raw materials and growing crystals.
In this configuration, radiation thermometer are placed above and below the carbon crucible, and the object is measured through the measurement window.
| What to measure | Contents to be measured and checked |
|---|---|
| SiC raw material | The temperature is measured from the bottom of the carbon crucible using radiation thermometer. |
| Growing crystal | The temperature is measured from the top of the carbon crucible using radiation thermometer. |
| Measurement window | It is used for measurement with radiation thermometer and for visual confirmation using video scope images. |
| External monitor | Check video scope image. |
Chapter 3
System configuration and connection example
In addition to measurements using radiation thermometer, the system is configuration by combining a measurement window, external monitor, setting display, PLC system, and other components.
| configuration | Role |
|---|---|
| radiation thermometer (with mirror) | The temperature of the SiC raw material and the growing crystal are measured from two points, above and below. |
| Measurement window | It is used for measurement with radiation thermometer and for visual confirmation of the target. |
| External monitor | We use video scope images to examine the crystal surface and other features. |
| Setting display (Japan Only) | Connect to the PLC system with a current of 4-20mA. |
The actual configuration will vary depending on the equipment conditions and existing systems, so we will consider it after confirming the necessary connection conditions.
Further reading
Check the documentation for temperature measurement during SiC crystal growth.
Information regarding the placement and measurement configuration of radiation thermometer in SiC crystal growth can also be found in the PDF document.
SiC crystal growth temperature measurement data
You can check configuration, including temperature measurement at two points (top and bottom) using radiation thermometer, the measurement window, and the external monitor.
You can view the detailed documentation after reviewing an overview of the measurement method on the webpage.
I would like to consult about temperature measurement for SiC crystal growth.
You can consider temperature measurement methods based on the measurement target, measurement location, equipment configuration, and connection conditions with the PLC.
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